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14N65KL - N-CHANNEL POWER MOSFET

Download the 14N65KL datasheet PDF. This datasheet also covers the 14N65K-MT variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The UTC 14N65K-MT is an N-Channel enhancement mode power MOSFET.

The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed.

It can also withstand high energy pulse under the avalanche and commutation mode conditions.

Key Features

  • S.
  • RDS(ON) < 0.63Ω @ VGS = 10V, ID = 7 A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 2.Drain 1 TO-220F2 1.Gate 3.Source.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (14N65K-MT-UnisonicTechnologies.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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14N65K-MT N-CHANNEL POWER MOSFET Unisonic Technologies
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Other Datasheets by Unisonic Technologies

Part Number Description
14N65KG N-CHANNEL POWER MOSFET
14N65-TC N-CHANNEL MOSFET
14N65G N-CHANNEL MOSFET
14N65L N-CHANNEL MOSFET
14N60-MH N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 14N65K-MT Preliminary 14A, 650V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 14N65K-MT is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse under the avalanche and commutation mode conditions. The UTC 14N65K-MT is ideally suitable for high efficiency switch mode power supply, power factor correction and electronic lamp ballast based on half bridge topology.  FEATURES * RDS(ON) < 0.63Ω @ VGS = 10V, ID = 7 A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL 2.Drain 1 TO-220F2 1.Gate 3.