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UNISONIC TECHNOLOGIES

5N50K Datasheet Preview

5N50K Datasheet

5A 500V N-CHANNEL MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
5N50K
5A, 500V N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The U TC 5N50K is a n N- channel p ower MOSF ET a dopting
UTC’s advanc ed techn ology to provide customers with DMOS,
planar stripe techn ology. T his technolo gy i s design ed to meet the
requirements of the minim um on- state resistance an d perfec t
switching perf ormance. It also can withstand hig h ener gy pulse in
the avalanche and communication mode.
The U TC 5N50K can b e us ed in a pplications, such as active
power factor correction, h igh efficienc y s witched m ode po wer
supplies, electronic lamp ballasts based on half bridge topology.
„ FEATURES
* RDS(ON) = 1.4@VGS = 10 V
* 100% avalanche tested
* High switching speed
„ SYMBOL
2.Drain
1
Power MOSFET
TO-220F
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
5N50KL-TF3-T
5N50KG-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-870.A
http://www.Datasheet4U.com




UNISONIC TECHNOLOGIES

5N50K Datasheet Preview

5N50K Datasheet

5A 500V N-CHANNEL MOSFET

No Preview Available !

5N50K
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 500
VGSS ±30
V
V
Drain Current
Continuous I
Pulsed (Note 2)
Avalanche Current (Note 2)
D5
IDM 20
IAR 5
A
A
A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
EAS 270
EAR
dv/dt
7.3
4.5
mJ
mJ
V/ns
Power Dissipation
PD 38
W
Junction Temperature
Storage Temperature
TJ +
TSTG -55~
150
+150
°C
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 21.5mH, IAS = 5.2A, VDD = 50V, RG = 25, Starting TJ = 25°C
4. ISD 5A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
„ THERMAL DATA
PARAMETER SYMBOL
Junction to Ambient
Junction to Case
θJA 62.5
θJC 3.25
RATINGS
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-870.A


Part Number 5N50K
Description 5A 500V N-CHANNEL MOSFET
Maker UNISONIC TECHNOLOGIES
Total Page 6 Pages
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