5N50K Datasheet | Unisonic Technologies

DESCRIPTION Power MOSFET The U TC 5N50K is a n N- channel p ower MOSF ET a dopting UTC’s advanc ed techn ology to provide customers with DMOS, planar stripe techn ology. T his technolo gy i s design ed to meet the requirements of the minim um on- state resistance an d perfec t switching perf ormance. It also can withstand hig h ener gy pulse in the avalanche and munication mode. The U TC 5N50K can b e us ed in a pplications, such as active power factor correction, h igh efficienc y s witched m ode po wer supplies, electronic lamp ballasts based on half bridge topology. TO-220F - FEATURES - RDS(ON) = 1.4Ω @VGS = 10 V - 100% avalanche tested - High switching speed - SYMBOL 2.Drain 1.Gate 3.Source - ORDERING INFORMATION Package TO-220F Pin Assignment 1 2 3 G D S Packing Tube Ordering Number Lead Free Halogen Free 5N50KL-TF3-T 5N50KG-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source .unisonic..tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-870.A http://.. - Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) UNIT PARAMETER SYMBOL RATINGS Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V A Continuous I D 5 Drain Current Pulsed (Note 2) IDM 20 A Avalanche Current (Note 2) IAR 5 A m J Single Pulsed (Note 3) EAS 270 Avalanche Energy Repetitive (Note 2) EAR 7.3 m J Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 38 W Junction Temperature TJ + 150 °C Storage Temperature TSTG -55~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 21.5m H, IAS = 5.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C - THERMAL DATA RATINGS θJA 62.5 θJC 3.25 UNIT °C/W °C/W PARAMETER SYMBOL Junction...