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PZ5D8EA Datasheet Preview

PZ5D8EA Datasheet

N-Channel Enhancement Mode MOSFET

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PZ5D8EA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 300mΩ @VGS = 4.5V
ID
0.84A
SOT-323
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±10
Continuous Drain Current2
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
0.84
0.67
2.4
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.36
0.23
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJA
TYPICAL MAXIMUM UNITS
340 °C / W
REV 1.0
1 2016/7/12




UNIKC

PZ5D8EA Datasheet Preview

PZ5D8EA Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

PZ5D8EA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±10V
20
0.4 0.63 1
±30
V
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 16V, VGS = 0V
VDS = 10V, VGS = 0V , TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 1.8V, ID = 0.2A
VGS = 2.5V, ID = 0.25A
VGS = 4.5V, ID = 0.5A
VDS = 5V, ID = 0.5A
300 700
226 400
177 300
5S
DYNAMIC
Input Capacitance
Ciss
60
Output Capacitance
Coss VGS = 0V, VDS = 10V, f = 1MHz 19 pF
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 20V,
ID = 1A, VGS = 4.5V
VDD = 10V, ID @ 0.5A,
VGS = 4.5V, RGEN = 5.1Ω
10
1.4
0.1 nC
0.3
17
36
nS
86
173
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 0.5A, VGS = 0V
0.3 A
1.2 V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
IF = 1A, dl/dt = 100A /mS
111 nS
102 uC
2Independent of operating temperature.
REV 1.0
2 2016/7/12


Part Number PZ5D8EA
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
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