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UNIKC

PZ3304QV Datasheet Preview

PZ3304QV Datasheet

MOSFET

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PZ3304QV
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
40V
RDS(ON)
28mΩ @VGS =10V
-40V
42mΩ @VGS = -10V
ID Channel
7A N
-7A P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 40
VDS P -40
Gate-Source Voltage
N ±20
VGS P ±20
Continuous Drain Current
TA = 25 °C
TA = 70°C
N7
P -7
ID N 5.5
P -4.5
Pulsed Drain Current1
N 28
IDM P -24
Avalanche Current
N
IAS
28
P
Avalanche Energy
L = 0.1mH
N
EAS 39
P
Power Dissipation
TA = 25 °C
TA = 70 °C
N
2
P
PD
N
1.3
P
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.0
1 2014/9/19




UNIKC

PZ3304QV Datasheet Preview

PZ3304QV Datasheet

MOSFET

No Preview Available !

PZ3304QV
N&P-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL MAXIMUM UNITS
48 62.5 °C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
CH. UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VGS = 0V, ID = -250mA
VDS = VGS, ID = 250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±16V
VDS = 0V, VGS = ±16V
N 40
P -40
N 1.0 1.8 3
V
P -1.0 -1.8 -3
N ±1
±30
P ±1
±30
Zero Gate Voltage Drain
Current
VDS = 32V, VGS = 0V
N
IDSS
VDS = -32V, VGS = 0V
VDS =30V, VGS = 0V, TJ = 55 °C
P
N
1
mA
-1
10
VDS = -30V, VGS = 0V, TJ = 55 °C P
-10
On-State Drain Current1
ID(ON)
VDS = 5V, VGS = 10V
VDS = -5V, VGS = -10V
N 20
P -20
A
VGS = 4.5V, ID = 6A
N
23 33
Drain-Source On-State
Resistance1
RDS(ON)
VGS = -4.5V, ID = -5A
VGS = 10V, ID = 7A
P
N
41 60
15 28
VGS = -10V, ID = -7A
P
26 42
Forward Transconductance1
gfs
VDS = 10V, ID = 7A
N
19
S
VDS = -10V, ID = -7A
P
18
REV 1.0
2 2014/9/19


Part Number PZ3304QV
Description MOSFET
Maker UNIKC
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