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UNIKC

PZ2503HV Datasheet Preview

PZ2503HV Datasheet

MOSFET

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PZ2503HV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 25mΩ @VGS = 10V
ID
6.2A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±16
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
6.2
5
31
Avalanche Current
IAS 17
Avalanche Energy
L = 0.1mH
EAS
18
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1.5
1
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Lead
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJL
TYPICAL
MAXIMUM
80
25
UNITS
°C / W
°C / W
Ver 1.0
1 2012/4/16




UNIKC

PZ2503HV Datasheet Preview

PZ2503HV Datasheet

MOSFET

No Preview Available !

PZ2503HV
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±16V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 70 °C
VDS = 5V, VGS = 10V
VGS = 4.5V, ID = 6A
VGS = 10V, ID = 7A
VDS = 5V, ID = 7A
30
1.0 1.8 3.0
±30
1
10
31
29 37
19 25
6.5
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
668
108
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Rg
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 7A
VDS = 0.5V(BR)DSS,
ID @ 7A, VGS = 10V, RG = 6Ω
69
4
13
6.8
2.5
3
8
24
55
28
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 7A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 7A, dlF/dt = 100A / mS
14
6
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
1.5
1
UNIT
V
mA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16


Part Number PZ2503HV
Description MOSFET
Maker UNIKC
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