900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






UNIKC

PZ2003EEA Datasheet Preview

PZ2003EEA Datasheet

MOSFET

No Preview Available !

PZ2003EEA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID
-28A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±25
TC = 25 °C
-28
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TC = 100 °C
TA = 25 °C
TA = 70 °C
ID
IDM
IAS
-17
-8.4
-7
-70
-30
Avalanche Energy
L = 0.1mH
EAS
45
TC = 25 °C
25
Power Dissipation
TC = 100 °C
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD
TJ, TSTG
10
2.2
1.4
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.1
1 2014/7/21




UNIKC

PZ2003EEA Datasheet Preview

PZ2003EEA Datasheet

MOSFET

No Preview Available !

PZ2003EEA
P-Channel Logic Level Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
Steady-State
RqJA
55
Junction-to-Case
Steady-State
RqJC
5
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA = 25°C.
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
-30
-1 -1.6
-3
V
VDS = 0V, VGS = ±16V
±30 uA
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
-1
mA
-10
VDS = -5V, VGS = -10V
-70
A
VGS = -4.5V, ID = -7A
VGS = -10V, ID = -8A
28 35
17.6 20
VDS = -5V, ID = -8A
20 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg(VGS=-10V)
Qg(VGS=-4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = -15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = -15V, ID = -8A
VDS = -15V,ID @ -8A,
VGS = -10V, RGS = 6Ω
1470
238
215
3
34
18
5.3
8.4
10
6
34
20
pF
Ω
nC
nS
REV 1.1
2 2014/7/21


Part Number PZ2003EEA
Description MOSFET
Maker UNIKC
PDF Download

PZ2003EEA Datasheet PDF






Similar Datasheet

1 PZ2003EEA MOSFET
UNIKC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy