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UNIKC

PM503BA Datasheet Preview

PM503BA Datasheet

P-Channel MOSFET

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PM503BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
115mΩ @VGS = -10V
ID
-2A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±12
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-2
-1.5
10
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.7
0.5
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL
Junction-to-Ambient2
RqJA
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper.
MAXIMUM UNITS
160 °C / W
REV 1.0
1 2017/1/10




UNIKC

PM503BA Datasheet Preview

PM503BA Datasheet

P-Channel MOSFET

No Preview Available !

PM503BA
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±12V
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 55 °C
VGS = -10V, ID = -2A
VGS = -4.5V, ID = -1.5A
VGS = -2.5V, ID = -1.5A
VDS = -5V, ID = -2A
-30
-0.4 -0.95 -1.4
±100
-1
-10
91 115
106 150
153 220
6
V
nA
mA
S
DYNAMIC
Input Capacitance
Ciss
258
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
35
Reverse Transfer Capacitance
Crss
25
Total Gate Charge2
Qg
6.5
Gate-Source Charge2
Qgs VDS= -15V,VGS= -10V,ID= -2A
0.5
Gate-Drain Charge2
Qgd
1.2
Turn-On Delay Time2
td(on)
14
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = -15V, VGS= -10V
ID @ -2A, RG = 6Ω
37
43
Fall Time2
tf
34
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C )
Continuous Current
IS
Forward Voltage1
VSD IF = -2A, VGS = 0V
-0.6
-1.1
pF
nC
nS
A
V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = -2A, dIF/dt = 100A / mS
Qrr
9.8 nS
2.5 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2017/1/10


Part Number PM503BA
Description P-Channel MOSFET
Maker UNIKC
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