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UNIKC

PK6H6BA Datasheet Preview

PK6H6BA Datasheet

MOSFET

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PK6H6BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 7.8mΩ @VGS = 10V
ID
46A
100% UIS Tested
100% Rg Tested
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
VDS 30 V
Gate-Source Voltage
VGS ±20 V
Continuous Drain Current4
Pulsed Drain Current1
Continuous Drain Current
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA= 70 °C
ID
IDM
ID
46
29
100
A
16
13
Avalanche Current
IAS 22
Avalanche Energy
L =0.1mH
EAS
24 mJ
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
31
12.5
W
Power Dissipation3
TA = 25 °C
TA = 70 °C
PD
4
W
2.6
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RqJA
RqJA
30
60
Junction-to-Case
Steady-State
RqJC
4
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t 10s value.
4Package limitation current is 29A.
UNITS
°C / W
REV 1.0
1 2017/1/10




UNIKC

PK6H6BA Datasheet Preview

PK6H6BA Datasheet

MOSFET

No Preview Available !

PK6H6BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 13A
VGS = 10V , ID = 13A
VDS = 5V, ID = 13A
30
1.35 1.75 2.3
±100
1
10
7.2 11
5.5 7.8
54
V
nA
mA
S
DYNAMIC
Input Capacitance
Ciss
857
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz 147 pF
Reverse Transfer Capacitance
Crss
105
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz 1 Ω
Total Gate Charge2
Gate-Source Charge2
Qg
VGS =10V
VGS =4.5V
Qgs
VDS = 15V, ID = 13A
18
10
nC
1.9
Gate-Drain Charge2
Qgd
5.2
Turn-On Delay Time2
td(on)
28
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V,
ID @ 13A, VGS = 10V, RGEN = 6Ω
24
50
nS
Fall Time2
tf
25
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
25 A
Forward Voltage1
VSD IF = 13A, VGS = 0V
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 13A, dlF/dt = 100A / mS
7.5 nS
1.5 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2017/1/10


Part Number PK6H6BA
Description MOSFET
Maker UNIKC
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