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PK6H2BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 1.7mΩ @VGS = 10V
ID 160A
100% UIS Tested
100% Rg Tested
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
VDS 30 V
Gate-Source Voltage
VGS ±20 V
Continuous Drain Current4 Pulsed Drain Current1 Continuous Drain Current
TC = 25 °C TC = 100 °C
TA = 25 °C TA= 70 °C
ID IDM ID
160 101 350
A 39 31
Avalanche Current
IAS 82
Avalanche Energy
L =0.1mH
EAS
336 mJ
Power Dissipation
TC = 25 °C TC = 100 °C
PD
83 W
33
Power Dissipation3
TA = 25 °C TA = 70 °C
PD
5 W
3.
PK6H2BA Datasheet
