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UNIKC

PK6H2BA Datasheet Preview

PK6H2BA Datasheet

MOSFET

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PK6H2BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 1.7mΩ @VGS = 10V
ID
160A
100% UIS Tested
100% Rg Tested
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
VDS 30 V
Gate-Source Voltage
VGS ±20 V
Continuous Drain Current4
Pulsed Drain Current1
Continuous Drain Current
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA= 70 °C
ID
IDM
ID
160
101
350
A
39
31
Avalanche Current
IAS 82
Avalanche Energy
L =0.1mH
EAS
336 mJ
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
83
W
33
Power Dissipation3
TA = 25 °C
TA = 70 °C
PD
5
W
3.2
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RqJA
RqJA
25
40
Junction-to-Case
Steady-State
RqJC
1.5
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t 10s value
4Package limitation current is 51A.
UNITS
°C / W
REV 1.2
1 2016/6/23




UNIKC

PK6H2BA Datasheet Preview

PK6H2BA Datasheet

MOSFET

No Preview Available !

PK6H2BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 20A
VGS = 10V , ID = 20A
VDS = 5V, ID = 20A
30
1.3 1.75 2.35
V
±100 nA
1
mA
10
1.2 2.4
1 1.7
85 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
6202
1058
786
2
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Qg
VGS =10V
VGS =4.5V
Qgs
VDS = 15V,
VGS = 10V, ID = 20A
142
74
nC
18
Gate-Drain Charge2
Qgd
31
Turn-On Delay Time2
td(on)
52
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V,
ID @ 20A, VGS = 10V, RGEN = 6Ω
31
120
nS
Fall Time2
tf
20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
83 A
Forward Voltage1
VSD IF = 20A, VGS = 0V
1V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / mS
36 nS
29 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.2
2 2016/6/23


Part Number PK6H2BA
Description MOSFET
Maker UNIKC
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