The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PK6D0BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 10.5mΩ @VGS = 10V
ID 40A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
40 25 80
Continuous Drain Current
TA = 25 °C TA= 70 °C
ID
10 8.3
Avalanche Current
IAS 21
Avalanche Energy
L =0.1mH
EAS
22
Power Dissipation
TC = 25 °C TC = 100 °C
PD
31 12
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2 1.
PK6D0BA Datasheet
