900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






UNIKC

PK6D0BA Datasheet Preview

PK6D0BA Datasheet

MOSFET

No Preview Available !

PK6D0BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 10.5mΩ @VGS = 10V
ID
40A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
40
25
80
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
10
8.3
Avalanche Current
IAS 21
Avalanche Energy
L =0.1mH
EAS
22
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
31
12
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2
1.3
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
60
Junction-to-Case
RqJC
4
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2017/1/10




UNIKC

PK6D0BA Datasheet Preview

PK6D0BA Datasheet

MOSFET

No Preview Available !

PK6D0BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 13A
VGS = 10V , ID = 13A
VDS = 5V, ID = 13A
30
1.3 1.75 2.3
V
±100 nA
1
mA
10
10 14
7 10.5
42 S
DYNAMIC
Input Capacitance
Ciss
529
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz 142 pF
Reverse Transfer Capacitance
Crss
64
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz 1 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
VGS =10V
VGS =4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V,
VGS = 10V, ID = 13A
VDS = 15V,
ID @ 13A, VGS = 10V, RGEN = 6Ω
10.3
6
1.4
3
15
13
21
15
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
25 A
Forward Voltage1
VSD IF = 13A, VGS = 0V
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 13A, dlF/dt = 100A / mS
8.2 nS
1.3 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2017/1/10


Part Number PK6D0BA
Description MOSFET
Maker UNIKC
PDF Download

PK6D0BA Datasheet PDF






Similar Datasheet

1 PK6D0BA MOSFET
UNIKC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy