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UNIKC

PK6B0SA Datasheet Preview

PK6B0SA Datasheet

MOSFET

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PK6B0SA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 5mΩ @VGS = 10V
ID
56A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
56
35
100
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
20
16
Avalanche Current
IAS 26
Avalanche Energy
L =0.1mH
EAS
33.8
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
31
12
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
4
2.6
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RqJA
RqJA
30
58
Junction-to-Case
Steady-State
RqJC
4
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 47A.
4The Power dissipation is based on RqJA t 10s value
UNITS
°C / W
REV 1.0
1 2016/8/16




UNIKC

PK6B0SA Datasheet Preview

PK6B0SA Datasheet

MOSFET

No Preview Available !

PK6B0SA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 1mA
30
V
VDS = VGS, ID = 250mA
1.35 1.7 2.3
VDS = 0V, VGS = ±20V
±100 nA
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
0.5
mA
5
VGS = 4.5V, ID = 16A
VGS = 10V , ID = 19A
5.3 7
3.7 5
VDS = 5V, ID = 19A
67 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
1165
227
146
2.6
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Qg
VGS =10V
VGS =4.5V
Qgs
VDS = 15V,
VGS = 10V, ID = 19A
25
13
nC
3
Gate-Drain Charge2
Qgd
7
Turn-On Delay Time2
td(on)
19
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V,
ID @ 19A, VGS = 10V, RGEN = 6Ω
10
40
nS
Fall Time2
tf
12
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
31 A
Forward Voltage1
VSD IF = 19A, VGS = 0V
1V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 19A, dlF/dt = 100A / mS
7.3 nS
0.5 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 47A.
REV 1.0
2 2016/8/16


Part Number PK6B0SA
Description MOSFET
Maker UNIKC
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