900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






UNIKC

PK676BA Datasheet Preview

PK676BA Datasheet

MOSFET

No Preview Available !

PK676BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 2.2mΩ @VGS = 10V
ID
111A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1
Tc = 25 °C
Tc = 100 °C
ID
IDM
111
70
150
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
24
19
Avalanche Current
IAS 69
Avalanche Energy
L =0.1mH
EAS
238
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
54
21
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.6
1.7
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
47
Junction-to-Case
RqJC
2.3
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 51A.
UNITS
°C / W
REV 1.0
1 2016/7/14




UNIKC

PK676BA Datasheet Preview

PK676BA Datasheet

MOSFET

No Preview Available !

PK676BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 32V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 16A
VGS = 10V , ID = 20A
VDS = 5V, ID = 20A
40
1.3 1.75 2.3
V
±100 nA
1
mA
10
1.9 3
1.6 2.2
96 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg
VGS =10V
VGS =4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 20V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 20V,
VGS = 10V, ID = 20A
VDS = 15V,
ID @ 20A, VGS = 10V, RGEN = 6Ω
6194
712
474
1.6
125
70
18
30
22
24
88
22
pF
Ω
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
41 A
Forward Voltage1
VSD IF = 20A, VGS = 0V
1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / μS
38 nS
25 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 51A.
REV 1.0
2 2016/7/14


Part Number PK676BA
Description MOSFET
Maker UNIKC
PDF Download

PK676BA Datasheet PDF






Similar Datasheet

1 PK676BA MOSFET
UNIKC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy