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PE544JZ Datasheet Preview

PE544JZ Datasheet

Dual N-Channel Enhancement Mode MOSFET

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PE544JZ
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 8.5mΩ @VGS = 4.5V
ID
39A
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
TC = 25 °C
39
Continuous Drain Current2
TC = 100 °C
TA = 25 °C
ID
24
12
Pulsed Drain Current1
TA = 70 °C
IDM
9.7
60
Avalanche Current
IAS 23.5
Avalanche Energy
L = 0.1mH
EAS
27.6
TC = 25 °C
23
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
9.4
2.2
TA = 70 °C
1.4
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient3
RJA
55
Junction-to-case
RJC
5.3
1Pulse width limited by maximum junction temperature.
2Package limitation current is 24A.
3The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.2
1 2016/5/25




UNIKC

PE544JZ Datasheet Preview

PE544JZ Datasheet

Dual N-Channel Enhancement Mode MOSFET

No Preview Available !

PE544JZ
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±8V
20
0.35 0.67 1
±30
Zero Gate Voltage Drain Current
IDSS
VDS = 16V, VGS = 0V
1
VDS = 10V, VGS = 0V , TJ = 125 °C
10
VGS = 4.5V, ID = 3A
5.1 6.8 8.5
Drain-Source
On-State Resistance1
RDS(ON)
VGS = 3.8V, ID = 3A
VGS = 3.1V, ID = 3A
VGS = 2.5V, ID = 3A
5.4 7.2 9
5.7 7.6 9.5
6.3 8.4 10.5
Forward Transconductance1
gfs
VGS = 1.8V, ID = 3A
VDS = 5V, ID = 3A
7 11 15
32
DYNAMIC
Input Capacitance
Ciss
1589
Output Capacitance
Coss VGS = 0V, VDS = 10V, f = 1MHz
214
Reverse Transfer Capacitance
Crss
165
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg(VGS=4.5V)
Qg(VGS=3.8V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 10V, ID = 3A
VDD = 10V
ID @ 3A, VGEN = 4.5V, RG = 6Ω
2.3
18.5
16
1.7
4.5
38
42
60
25
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 3A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 3A, dlF/dt = 100A / mS
24
8
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
1.8
1.2
3Package limitation current is 24A.
UNITS
V
uA
mA
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.2
2 2016/5/25


Part Number PE544JZ
Description Dual N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 8 Pages
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