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PE526BA Datasheet Preview

PE526BA Datasheet

N-Channel Enhancement Mode MOSFET

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PE526BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4mΩ @VGS = 10V
ID3
49A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Tc = 25 °C
49
Continuous Drain Current3
Tc = 100 °C
TA = 25 °C
ID
31
17
Pulsed Drain Current1
TA= 70 °C
IDM
14
50
Avalanche Current
IAS 47
Avalanche Energy
L =0.1mH
EAS
110
TC = 25 °C
16
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
6
2
TA = 70 °C
1.3
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
60
Junction-to-Case
RqJC
7.5
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 25A.
UNITS
°C / W
REV 1.0
1 2014-2-28




UNIKC

PE526BA Datasheet Preview

PE526BA Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

PE526BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
30
1 1.5
3
V
VDS = 0V, VGS = ±20V
±100 nA
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
1
mA
10
VDS = 5V, VGS = 10V
50
A
VGS = 4.5V, ID = 15A
VGS = 10V , ID = 17A
3.8 4.5
3.1 4
VDS = 10V, ID = 17A
102 S
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 15V, f = 1MHz
2690
354
pF
Reverse Transfer Capacitance
Crss
309
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz 0.9 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V , ID = 17A
VDD= 15V,
ID @ 17A, VGEN = 10V, RG= 6Ω
65.6
34.3
9
nC
15.7
27
14
nS
59
12
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
49 A
Forward Voltage1
VSD IF = 17A, VGS = 0V
1V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 17A, dlF/dt = 100A / μS
28 nS
15 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 25A.
REV 1.0
2 2014-2-28


Part Number PE526BA
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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