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PD1503YVS-A
Dual N- Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
Q2 30V 15.5mΩ @VGS = 10V 9A
Q1 30V 18mΩ @VGS = 10V 8A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Q2
Q1
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1 Avalanche Current
TA = 25 °C TA = 70 °C
Avalanche Energy
L =0.1mH
Power Dissipation
TA = 25 °C TA = 70 °C
Junction & Storage Temperature Range
VDS VGS
ID
IDM IAS EAS
PD
Tj, Tstg
30
30
±20
±20
9
8
7
6
35
30
29
21
42
24
2
1.28
-55 to 150
UNITS V V
A
mJ W °C
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Schottky
Reverse Current
VR = 25V
IR
0.
PD1503YVS-A Datasheet
