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UNIKC

PD1503BV Datasheet Preview

PD1503BV Datasheet

MOSFET

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PD1503BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 15mΩ @VGS = 10V
ID
12A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
12
9
50
Avalanche Current
IAS 28
Avalanche Energy
L = 0.1mH
EAS
39
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
3.1
2
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
ABSLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
SCHOTTKY
Reverse Current
VR = 45V
IR 0.06
Forward Voltage
IF = 2A
VF 0.49
UNITS
A
V
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
40 °C / W
Ver 1.0
1 2012/4/16




UNIKC

PD1503BV Datasheet Preview

PD1503BV Datasheet

MOSFET

No Preview Available !

PD1503BV
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
UNIT
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 250mA
30
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
1 1.8
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±20V
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 125 °C
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 11A
VDS = 5V, ID = 11A
16.3
11.5
40
DYNAMIC
Input Capacitance
Ciss
890
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
349
Reverse Transfer Capacitance
Crss
174
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.77
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg VGS = 10V
VGS = 4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V, VGS = 10V,
ID = 11A
VDD = 30V,
ID @ 11A, VGS = 10V, RGEN = 3Ω
15.5
7.5
3
3
7
10
22
6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 11A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 11A, dlF/dt = 100A / mS
23
37
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3
±100
0.03
10
24
15
V
nA
mA
mΩ
S
pF
Ω
nC
nS
4.5 A
0.7 V
nS
nC
Ver 1.0
2 2012/4/16


Part Number PD1503BV
Description MOSFET
Maker UNIKC
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