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PD1303YVS
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 13mΩ @VGS =10V
30V 13mΩ @VGS =10V
ID Channel 9A Q1 9A Q2
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
Q1 30 VDS Q2 30
Gate-Source Voltage
Q1 ±20 VGS Q2 ±20
Continuous Drain Current1
TA = 25 °C TA = 70°C
Q1 9 Q2 9 ID Q1 7.2 Q2 7.2
Pulsed Drain Current1
Q1 21 IDM Q2 21
Avalanche Current
Q1 25 IAS Q2 27
Avalanche Energy
L = 0.1mH
Q1 32 EAS Q2 36
Power Dissipation
TA = 25 °C TA = 70 °C
Q1 1.7
Q2 PD
Q1 1.1
Q2
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
REV 1.
PD1303YVS Datasheet
