PD1303YVS
Dual N-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM UNITS
Junction-to-Ambient2
RqJA
RqJA
Q1
Q2
70
70
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
CH. UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
V(BR)DSS
VGS(th)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
Q1 30
Q2 30
Q1 1 1.5 3
Q2 1 1.8 3
V
Gate-Body Leakage
Q1
IGSS VDS = 0V, VGS = ±20V
Q2
±100
nA
±100
Zero Gate Voltage Drain
Current
Q1
VDS = 24V, VGS = 0V
Q2
IDSS
Q1
VDS =20V, VGS = 0V, TJ = 55 °C Q2
1
30
mA
10
300
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 7A
VGS = 10V, ID = 9A
Q1
Q2
Q1
Q2
14 18.5
15 18.5 mΩ
10 13
10 13
Forward Transconductance1
gfs
VDS = 5V, ID = 9A
Q1
Q2
28
30
S
REV 1.0
2 2014/9/10
