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PD0903BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.5mΩ @VGS = 10V
ID 15A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1 Avalanche Current
TA = 25 °C TA = 70 °C
ID
IDM IAS
15 12 80 33
Avalanche Energy
L =0.1mH
EAS
54
Power Dissipation
TA= 25 °C TA =70 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
3.125 2
-55 to 150
UNITS V
A
mJ W °C
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Schottky
Reverse Current
VR = 45V IR 0.05
Forward Voltage
IF = 1A
VF 0.
PD0903BV Datasheet
