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PA610DTF
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-100V
200mΩ @VGS = -10V
ID -10A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
-100
Gate-Source Voltage
VGS
±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID
-10 -8
IDM
-40
Avalanche Current
IAS
-28
Avalanche Energy
L = 0.1mH
EAS
39
Power Dissipation
TC = 25 °C
PD
36
TC = 100 °C
23
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC RqJA RqJS
TYPICAL 0.
PA610DTF Datasheet
