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PA610ATF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
160mΩ @VGS = 10V
ID 8A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
8 5.4 32
Avalanche Current
IAS 8
Avalanche Energy
L = 0.1mH
EAS
22
Power Dissipation
TC = 25 °C TC = 100 °C
PD
25 10
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA RqCS
TYPICAL 0.5
MAXIMUM 5
62.5
UNITS °C / W
REV 1.
PA610ATF Datasheet
