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UNIKC

PA110BL Datasheet Preview

PA110BL Datasheet

MOSFET

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PA110BL
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
110mΩ @VGS = 10V
ID
3A
SOT- 223
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
TC = 25 °C
6
Continuous Drain Current
TA = 25 °C
ID
3.2
Pulsed Drain Current1
TA = 100 °C
IDM
2
15
Avalanche Current
IAS 6.6
Avalanche Energy
L = 0.1mH
EAS
2.2
Power Dissipation
TA = 25 °C
TA = 100 °C
PD
2.5
1
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
50
Junction-to-Case
RqJC
14
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2014/6/27




UNIKC

PA110BL Datasheet Preview

PA110BL Datasheet

MOSFET

No Preview Available !

PA110BL
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
100
1 1.8 3
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V , TJ = 125 °C
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 6A
VGS = 10V, ID = 6A
VDS = 5V, ID = 6A
85 120
80 110
22
DYNAMIC
Input Capacitance
Ciss
579
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
57
Reverse Transfer Capacitance
Crss
31
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 50V,
VGS = 10V, ID = 6A
VDS = 50V, ID @ 6A
VGS = 10V, RGS = 6Ω
1.4
14
1.8
4.6
16
5
36
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 6A, VGS = 0V
1.7
1.4
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 6A, dl/dt = 100A / μS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
22
15
2Independent of operating temperature.
UNIT
V
nA
mA
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2 2014/6/27


Part Number PA110BL
Description MOSFET
Maker UNIKC
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PA110BL Datasheet PDF






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