Click to expand full text
PA110BDA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
105mΩ @VGS = 10V
ID 15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
15 9.2 20
Avalanche Current
IAS 5.4
Avalanche Energy
L =1mH
EAS 14.8
Power Dissipation
TC = 25 °C TC = 100 °C
PD
50 20
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA RqJC
TYPICAL
MAXIMUM 62.5 2.5
UNITS °C / W
REV 1.
PA110BDA Datasheet
