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PA110BC Datasheet Preview

PA110BC Datasheet

N-Channel MOSFET

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PA110BC
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
110mΩ @VGS = 10V
ID
4A
SOT-89
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
ID
IDM
4
3.5
15
Avalanche Current
IAS 4.8
Avalanche Energy
L = 0.1mH
EAS
11.5
Power Dissipation3
TA = 25 °C
TA = 100 °C
PD
3.9
2.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RqJA
RqJA
32
63
Junction-to-Case
RqJC
20
1Pulse width limited by maximum junction temperature.
2 The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t 10s value.
UNITS
°C / W
REV 1.0 1 2015/7/9




UNIKC

PA110BC Datasheet Preview

PA110BC Datasheet

N-Channel MOSFET

No Preview Available !

PA110BC
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
100
1 1.8
3
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V , TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 4A
VGS = 10V, ID = 4A
VDS = 5V, ID = 4A
86 120
81 110
22 S
DYNAMIC
Input Capacitance
Ciss
573
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
58 pF
Reverse Transfer Capacitance
Gate Resistance
Crss
Rg
VGS = 0V, VDS = 0V, f = 1MHz
32
1.5 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 50V,ID = 4A
VDS = 50V,
ID@ 4A, VGS = 10V, RGS = 6Ω
13.6
8
nC
2
4.6
16
5
nS
35
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 4A, VGS = 0V
2.8 A
1.4 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 4A, dl/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
21 nS
14 nC
2Independent of operating temperature.
REV 1.0 2 2015/7/9


Part Number PA110BC
Description N-Channel MOSFET
Maker UNIKC
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PA110BC Datasheet PDF






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