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PA102FMA Datasheet Preview

PA102FMA Datasheet

P-Channel MOSFET

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PA102FMA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
118mΩ @VGS = 4.5V
ID
-2A
SOT-23(S)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±12
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA= 70 °C
ID
IDM
-2
-1.7
-9
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.9
0.6
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
130
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2014-2-26




UNIKC

PA102FMA Datasheet Preview

PA102FMA Datasheet

P-Channel MOSFET

No Preview Available !

PA102FMA
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±12V
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125 °C
VGS = -2.5V, ID = -1A
VGS = -4.5V, ID = -2A
VGS = -10V , ID = -2A
VDS = -5V, ID = -2A
-20
-0.3
-0.75
124
87
68
7.5
-1.2
±100
-1
-10
215
118
85
V
nA
mA
S
DYNAMIC
Input Capacitance
Output Capacitance
Ciss 364
Coss VGS = 0V, VDS = -10V, f = 1MHz 88 pF
Reverse Transfer Capacitance
Crss
72
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = -10V , VGS = -4.5V,
ID = -2A
5
0.7
2.1
Turn-On Delay Time2
td(on)
24
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = -10V,
ID @ -1A, VGS = -4.5V, RG= 6Ω
24
35
Fall Time2
tf
17
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -2A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
VGS = 0V, dlS/dt = 100A / μS
11
2.2
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
0.75
1.2
nC
nS
A
V
nS
nC
REV 1.0
2 2014-2-26


Part Number PA102FMA
Description P-Channel MOSFET
Maker UNIKC
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PA102FMA Datasheet PDF






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