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UNIKC

PA102FDG Datasheet Preview

PA102FDG Datasheet

P-Channel MOSFET

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PA102FDG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
115mΩ @VGS = -4.5V
ID
-10A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±12
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
-10
-6.2
-24
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
25
9.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
5
110
UNITS
°C / W
Ver 1.1
1 2013-3-26




UNIKC

PA102FDG Datasheet Preview

PA102FDG Datasheet

P-Channel MOSFET

No Preview Available !

PA102FDG
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±12V
-20
-0.45 -0.8 -1.2
±100
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -16V, VGS = 0V
VDS = -13.2V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -4.5V
-24
-1
-10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = -2.5V, ID = -2A
VGS = -4.5V, ID = -3A
124 180
93 115
Forward Transconductance1
gfs
VDS = -5V, ID = -3A
4.4
DYNAMIC
Input Capacitance
Ciss
369
Output Capacitance
Coss VGS = 0V, VDS = -10V, f = 1MHz
78
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 0.5V(BR)DSS, VGS = -4.5V,
ID = -3A
Qgd
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = -10V,
ID @ -1A, VGS = -5V, RG = 6Ω
Fall Time2
tf
67
5.1
1
2
25
60
70
60
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Pulsed Current3
ISM
Forward Voltage1
VSD IF = -10A, VGS = 0V
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
-10
-24
-1.2
2Independent of operating temperature.
3Pusle width limited by maximum junction temperature.
UNIT
V
nA
mA
A
S
pF
nC
nS
A
V
Ver 1.1
2 2013-3-26


Part Number PA102FDG
Description P-Channel MOSFET
Maker UNIKC
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PA102FDG Datasheet PDF






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