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UNIKC

P9515BD Datasheet Preview

P9515BD Datasheet

N-Channel MOSFET

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P9515BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
90mΩ @VGS = 10V
ID
18A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 150
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
18
11
37
Avalanche Current
IAS 8
Avalanche Energy
L = 1mH
EAS
32
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
56
22.7
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
1.8
°C / W
62.5
REV 1.1 1 2016/6/6




UNIKC

P9515BD Datasheet Preview

P9515BD Datasheet

N-Channel MOSFET

No Preview Available !

P9515BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
150
1.3 1.8 2.3
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 120V, VGS = 0V
VDS = 100V, VGS = 0V , TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 10A
VDS = 5V, ID = 10A
80 110
76 90
35 S
DYNAMIC
Input Capacitance
Ciss
1119
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz 106 pF
Reverse Transfer Capacitance
Gate Resistance
Crss
Rg
VGS = 0V, VDS = 0V, f = 1MHz
50
0.9 Ω
Total Gate Charge2
Gate-Source Charge2
Qg(VGS = 10V)
Qg(VGS = 4.5V)
Qgs
VDS = 75V, VGS = 10V,
ID = 10A
24
13
nC
3.3
Gate-Drain Charge2
Qgd
7
Turn-On Delay Time2
td(on)
21
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 75V,
ID @ 10A, VGS = 10V, RGEN = 6Ω
34
30
nS
Fall Time2
tf
22
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 10A, VGS = 0V
15 A
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 10A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
55 nS
96 nC
2Independent of operating temperature.
REV 1.1 2 2016/6/6


Part Number P9515BD
Description N-Channel MOSFET
Maker UNIKC
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P9515BD Datasheet PDF






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