| Part number | P9006ESG |
|---|---|
| Datasheet | P9006ESG-UNIKC.pdf |
| File Size | 433.49 KB |
| Manufacturer | UNIKC |
| Description | P-Channel MOSFET |
|
|
SYMBOL RqJC TYPICAL MAXIMUM UNITS 2.3 °C / W Ver 1.0 1 2012/11/22 P9006ESG P-Channel Enhancement Mode MOSFET (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Bo.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
P9006EDA | P-Channel Enhancement Mode Field Effect Transistor | NIKO-SEM |
 |
P9006EDG | P-Channel Logic Level Enhancement | Niko-Sem |
 |
P9006EDG | P-Channel MOSFET | VBsemi |
|
P9006EVA | P-Channel Enhancement Mode Field Effect Transistor | NIKO-SEM |
| Part Number | Description |
|---|---|
| P9006EDG | P-Channel MOSFET |
| P9006EI | P-Channel MOSFET |
| P9006EL | MOSFET |
| P9006ETF | P-Channel MOSFET |
| P9006EVG | P-Channel MOSFET |
