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P9006EL
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = 10V
ID -4A
SOT- 223
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1 Pulsed Drain Current2
TA = 25 °C TA = 100 °C
ID IDM
-4 -2.7 -30
Avalanche Current
IAS -24
Avalanche Energy
L = 0.1mH
EAS
30
Power Dissipation
TA = 25 °C TA = 100 °C
PD
3.125 1.25
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Limited by Package. 2Pulse width limited by maximum junction temperature.
SYMBOL
RqJC RqJA
TYPICAL
MAXIMUM
40 60
UNITS °C / W
Ver 1.
P9006EL Datasheet
