The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P9006EI
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = -10V
ID -18A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1 Pulsed Drain Current2
TC = 25 °C TC = 100 °C
ID IDM
-18 -11 -50
Avalanche Current
IAS -24
Avalanche Energy
L = 0.1mH
EAS
30
Power Dissipation
TC = 25 °C TC = 100 °C
PD
51 20
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited by package.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 2.45 50
UNITS °C / W
Ver 1.
P9006EI Datasheet
