| Part number | P9006EDG |
|---|---|
| Manufacturer | UNIKC |
| File Size | 439.73 KB |
| Description | P-Channel MOSFET |
| Datasheet | P9006EDG-UNIKC.pdf |
|
|
SYMBOL RqJC RqJA TYPICAL MAXIMUM 3 75 UNITS °C / W Ver 1.1 1 2013-3-26 P9006EDG P-Channel Enhancement Mode MOSFET (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
P9006EDA | P-Channel Enhancement Mode Field Effect Transistor | NIKO-SEM |
 |
P9006EDG | P-Channel Logic Level Enhancement | Niko-Sem |
 |
P9006EDG | P-Channel MOSFET | VBsemi |
|
P9006EVA | P-Channel Enhancement Mode Field Effect Transistor | NIKO-SEM |
| Part Number | Description |
|---|---|
| P9006EI | P-Channel MOSFET |
| P9006EL | MOSFET |
| P9006ESG | P-Channel MOSFET |
| P9006ETF | P-Channel MOSFET |
| P9006EVG | P-Channel MOSFET |
