P9006EDG Overview
SYMBOL RqJC RqJA TYPICAL MAXIMUM 3 75 UNITS °C / W Ver 1.1 1 2013-3-26 P9006EDG P-Channel Enhancement Mode MOSFET (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source.
P9006EDG Details
| Part number | P9006EDG |
|---|---|
| Datasheet | P9006EDG Datasheet PDF (Download) |
| File Size | 439.73 KB |
| Manufacturer | UNIKC |
| Description | P-Channel MOSFET |
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