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P8315BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
83mΩ @VGS = 10V
ID 20A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 150
Gate-Source Voltage
VGS ±30
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
20 12 50
Avalanche Current
IAS 20
Avalanche Energy
L = 1mH EAS 207
Power Dissipation
TC = 25 °C TC = 100 °C
PD
73 29
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA RqJC
TYPICAL
MAXIMUM 50 1.7
UNITS °C / W
REV 1.
P8315BD Datasheet
