P8008HVA Datasheet - UNIKC

P8008HVA Dual N-Channel MOSFET

P8008HVA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 68mΩ @VGS = 10V ID 3.2A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM 3.2 2.5 18 Avalanche Current IAS 15.8 Avalanche Energy L =0.1mH EAS 12.5 Power Dissipation TA = 25 °C TA= 70°C PD 1.5 1 Ope.

P8008HVA-UNIKC.pdf