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P8008BVA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 68mΩ @VGS = 10V
ID 3.5A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 80
Gate-Source Voltage
VGS ±25
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
3.5 2.8 14
Avalanche Current
IAS 14.7
Avalanche Energy
L = 0.1mH
EAS
10.8
Power Dissipation
TA= 25 °C TA =70 °C
PD
1.8 1.1
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient Junction-to-Lead 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA RqJL
TYPICAL
MAXIMUM 69 25
UNITS °C / W
REV 1.
P8008BVA Datasheet
