P8008BV
N-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±25V
VDS = 64V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 55 °C
80
1
V
23
±100 nA
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
On-State Drain Current1
RDS(ON)
gfs
ID(ON)
VGS = 4.5V, ID = 1A
VGS = 10V, ID = 3A
VDS = 10V, ID = 3A
VDS = 5V, VGS = 10V
56 90 mΩ
51 80
10 S
15 A
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
1093
93
53
pF
Gate Resistance
Rg VGS = 0V,VDS = 0V,f = 1MHz 1.5 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 40V,
ID = 3A,VGS = 10V
Qgd
20
3 nC
6
Turn-On Delay Time2
td(on)
5.8
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 40V,
ID @ 3A,VGS = 10V, RGEN = 6Ω
3.8
22
nS
Fall Time2
tf
5.2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
2.5 A
Forward Voltage1
VSD IF = 3A, VGS = 0V
1V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 3A, dlF/dt = 100A / mS
24 nS
23 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2％.
2Independent of operating temperature.
REV 1.0
2 2014/12/2
