P8008BV Datasheet - UNIKC

P8008BV N-Channel MOSFET

P8008BV N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 80mΩ @VGS = 10V ID 3A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Drain Current1 TA = 25 °C TA = 100 °C ID 3 2 Pulsed Drain Current IDM 15 Avalanche Current IAS 22 Avalanche Energy L = 0.1mH EAS 26 Power Dissipation TA= 25 °C TA =100 °C PD 2.5 1 J.

P8008BV-UNIKC.pdf