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P8008BV
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 80mΩ @VGS = 10V
ID 3A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 80
Gate-Source Voltage
VGS ±25
Continuous Drain Current1
TA = 25 °C TA = 100 °C
ID
3 2
Pulsed Drain Current
IDM 15
Avalanche Current
IAS 22
Avalanche Energy
L = 0.1mH
EAS
26
Power Dissipation
TA= 25 °C TA =100 °C
PD
2.5 1
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA RqJC
TYPICAL
MAXIMUM 50 25
UNITS °C / W
REV 1.
P8008BV Datasheet
