P8008BD Datasheet - UNIKC

P8008BD N-Channel MOSFET

P8008BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 80V 80mΩ @VGS = 10V 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 Avalanche Current1 TC = 25 °C ID 15 TC = 100 °C 10 IDM 60 IAS,IAR 23 Avalanche Energy Repetitive Avalanche Energy1 L=0.1mH EAS 27 EAR See Figure5,6 Pow.

P8008BD-UNIKC.pdf