P8008BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±25V
80
1 1.9 3
±100
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 64V, VGS = 0V
VDS = 60V, VGS = 0V , TJ = 125°C
VDS = 5V, VGS = 10V
60
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS =4.5V, ID = 10A
VGS = 10V, ID = 15A
VDS = 5V, ID = 15A
65 95
56 80
15
DYNAMIC
Input Capacitance
Ciss
1070
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
95
Reverse Transfer Capacitance
Crss
55
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 15A
VDS = 40V, RL=15Ω
ID @ 15A, VGS = 10V, RGEN = 6Ω
1.35
18.6
4.5
3.8
25
290
50
160
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = IS, VGS = 0V
15
1
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF=15A,dIF/dt=100A/mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2％.
55
85
2Independent of operating temperature.
UNITS
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
REV1.2
2 2014/6/16
