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P5010AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
100V
50mΩ @VGS = 10V
23A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±20
Continuous Drain Current1 Pulsed Drain Current2
TC = 25 °C TC = 100 °C
ID
23 14
IDM
90
Avalanche Current
IAS
38
Avalanche Energy
L=0.1mH
EAS
73
Power Dissipation
TC = 25 °C
PD
56
TC = 100 °C
22
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited by package.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 2.2 62.
P5010AD Datasheet
