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UNIKC

P45N02LDG Datasheet Preview

P45N02LDG Datasheet

N-Channel Enhancement Mode MOSFET

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P45N02LDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 20mΩ @VGS = 10V
ID
32A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 25
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
32
20
110
Avalanche Current
IAS 23
Avalanche Energy
L = 0.1mH
EAS
27
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
35
14
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
Case-to-Heatsink
1Pulse width limited by maximum junction temperature.
2Limited by package, Duty cycle 1%.
SYMBOL
RqJC
RqJA
RqCS
TYPICAL
0.7
MAXIMUM
3.6
75
UNITS
°C / W
Ver 1.1
1 2013-3-13




UNIKC

P45N02LDG Datasheet Preview

P45N02LDG Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P45N02LDG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
25
1.0 1.8 2.5
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
110
25
250
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 15A
VDS = 5V, ID = 15A
29 41
14 20
19
DYNAMIC
Input Capacitance
Ciss
492
Output Capacitance
Coss
VGS = 0V, VDS = 15V, f = 1MHz
221
Reverse Transfer Capacitance
Crss
187
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.5
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS = 4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V, ID = 15A
VDD = 15V,
ID@ 15A, VGS = 10V, RGS = 6Ω
14.7
7.7
2.3
5.6
10
17
34
27
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 15A, VGS = 0V
25
1.4
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 15A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
27
36
2Independent of operating temperature.
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.1
2 2013-3-13


Part Number P45N02LDG
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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