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P4506BV Datasheet Preview

P4506BV Datasheet

N-Channel Enhancement Mode MOSFET

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P4506BV
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 45mΩ @VGS = 10V
ID
5.5A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TA = 25 °C
TA = 70 °C
ID
IDM
IAS
5.5
4.5
30
23
Avalanche Energy
L = 0.1mH
EAS
26
Power Dissipation
TA= 25 °C
TA =70 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
2.5
1.6
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
25
50
UNITS
°C / W
REV 1.0
1 2014/12/2




UNIKC

P4506BV Datasheet Preview

P4506BV Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P4506BV
N-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TC = 125 °C
VDS = 10V, VGS = 10V
60
1
30
1.5 3
V
±100 nA
1
mA
10
A
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 4.5A
VGS = 10V, ID = 5.5A
46 65
40 45
Forward Transconductance1
gfs
VDS = 5V, ID = 5.5A
16 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
969
103
62
pF
Gate Resistance
Rg VGS = 0V, f = 1MHz
1.6 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 0.5V(BR)DSS, VGS = 10V,
ID =5.5A
Qgd
21
3.6
7.5
Turn-On Delay Time2
td(on)
25
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 30V,ID @ 5.5A,
VGS = 10V, RGEN = 6Ω
188
25
Fall Time2
tf
75
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 5.5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 5.5A, dlF/dt = 100A /mS
29.5
25
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
5.5
1.3
nC
nS
A
V
nS
nC
REV 1.0
2 2014/12/2


Part Number P4506BV
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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