P4404EDG
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
-40
-1.7 -1.9 -2.5
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
-50
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -8A
VGS = -10V, ID = -10A
VDS = -10V, ID = -10A
57 68
38 44
11
DYNAMIC
Input Capacitance
Ciss
850
Output Capacitance
Coss VGS = 0V, VDS = -20V, f = 1MHz
180
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -10A
120
14
2.2
1.9
Gate Resistance
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V , f = 1MHZ
VDS = -20V, RL = 1Ω
ID@ -1A, VGS = -10V, RGS = 6Ω
3.5
6.0
9.2
19.2
11.8
5
12.8
18.6
34.8
21.6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -10A, VGS = 0V
-20
-1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -5A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2％.
15.5
7.9
2Independent of operating temperature.
UNIT
V
nA
mA
A
mΩ
S
pF
nC
Ω
nS
A
V
nS
nC
Ver 1.1
2 2013-3-22
