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P4404EDG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
44mΩ @VGS = -10V
ID -20A
TO-252
100% UIS tested
100% Rg tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage Gate-Source Voltage
VDS
-40 V
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
-20 -16
A -50
Avalanche Current Avalanche Energy2
IAS -18 EAS 48 mJ
Power Dissipation
TC = 25 °C TC = 100 °C
PD
30 W
19
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2VDD = -20V , Starting TJ = 25 °C.
P4404EDG Datasheet
