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P4004ED
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
40mΩ @VGS = -10V
ID -21A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC= 25 °C TC= 70 °C
ID IDM
-21 -17 -70
Avalanche Current Avalanche Energy 2
L = 0.1mH
IAS EAS
-27 36
Power Dissipation
TC= 25 °C TC= 70°C
PD
30 20
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2VDD = -20V . Starting TJ = 25°C.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 4.
P4004ED Datasheet
