900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






UNIKC

P4004ED Datasheet Preview

P4004ED Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

P4004ED
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
40mΩ @VGS = -10V
ID
-21A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 70 °C
ID
IDM
-21
-17
-70
Avalanche Current
Avalanche Energy 2
L = 0.1mH
IAS
EAS
-27
36
Power Dissipation
TC= 25 °C
TC= 70°C
PD
30
20
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2VDD = -20V . Starting TJ = 25°C.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
4.1
40
UNITS
°C / W
REV 1.0
1 2014/5/13




UNIKC

P4004ED Datasheet Preview

P4004ED Datasheet

P-Channel Enhancement Mode MOSFET

No Preview Available !

P4004ED
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
VGoaltteagTehreshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
VDS =-32V, VGS = 0V
VDS =-30V, VGS = 0V, TJ = 125°C
VDS = -5V, VGS = -10V
-40
-2.0
-70
-2.5 -3
±250
1
10
V
nA
mA
A
Drain-Source On-State
Resistance1
RDS(ON)
VGS =-5V, ID =-8A
VGS = -7V, ID = -8A
VGS =-10V, ID =-10A
65 73
35 50
30 40
Forward Transconductance1
gfs
VDS = -10V, ID = -10A
20 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Gate Resistance
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg(VGS = -10V)
Qg(VGS =-4.5V)
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
VGS = 0V, VDS = -20V, f = 1MHz
VDS =0.5V(BR)DSS,
ID = -18A
VGS = 0V, VDS = 0V, f = 1MHz
@VDS =-20V ,RL = 2Ω,ID -10A,
VGS=-10V,RGS=6Ω
1090
175
91
17
8.5
5.5
3
4.95
6
16
26
10
pF
nC
Ω
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -1A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -10A, dlF/dt = 100A / μS
15.5
7.9
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
-21
-1
A
V
nS
nC
REV 1.0
2 2014/5/13


Part Number P4004ED
Description P-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
PDF Download

P4004ED Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 P4004ED P-Channel Enhancement Mode MOSFET
UNIKC
2 P4004ED P-Channel Logic Level Enhancement Mode Field Effect Transistor
NIKO-SEM





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy