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P3606BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 36mΩ @VGS = 10V
ID 22A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID IDM
22 14 45
Avalanche Current
IAS 18
Avalanche Energy
L=0.1mH
EAS
16
Power Dissipation
TC= 25 °C TC= 100°C
PD
39 15.6
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 3.2 62.5
UNITS °C / W
REV 1.
P3606BD Datasheet
