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P3506DT
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
35mΩ @VGS = 10V
ID -40A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
-60
Gate-Source Voltage
VGS
±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID
IDM
-40 -25 -150
Avalanche Current Avalanche Energy2
IAS
-40
L = 0.1mH
EAS
80
Power Dissipation
TC = 25 °C
PD
104
TC = 100 °C
41
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2VDD=-30V .Starting TJ = 25°C
SYMBOL
RqJC RqJA
TYPICAL
MAXIMUM 1.
P3506DT Datasheet
