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P2615ATG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
26mΩ @VGS = 10V
ID 53A
TO-220 100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±30
Continuous Drain Current
Pulsed Drain Current1 Avalanche Current
TC= 25 °C TC= 100 °C
ID
IDM IAS
53 34 160 37
Avalanche Energy
L = 0.3 mH
EAS
210
Power Dissipation
TC= 25 °C TC= 100°C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
178 71 -55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 0.7 62.5
UNITS °C / W
REV 1.
P2615ATG Datasheet
