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P2504EDG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
25.8mΩ @VGS = -10V
ID -18A
TO-252
100% UIS tested
100% Rg tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage Gate-Source Voltage
VDS
-40 V
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 70 °C
ID IDM
-18 -13.5 -40
A
Power Dissipation
TC = 25 °C TC = 70 °C
PD
42 W
27
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 3 75
UNITS °C / W
REV 1.
P2504EDG Datasheet
