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UNIKC

P2060ZT Datasheet Preview

P2060ZT Datasheet

N-Channel MOSFET

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P2060ZT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
190mΩ @VGS = 10V
ID
20A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
EAS
20
12
59
4
320
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
48
19
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 40mH ,starting TJ = 25°C.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
1
°C / W
62.5
REV 1.0
1 2017/1/18




UNIKC

P2060ZT Datasheet Preview

P2060ZT Datasheet

N-Channel MOSFET

No Preview Available !

P2060ZT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
600
2 3.1
4
V
±100 nA
Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
IDSS
RDS(ON)
gfs
VDS = 600V, VGS = 0V , TC = 25 °C
VDS = 480V, VGS = 0V , TC = 100 °C
VGS = 10V, ID = 10A
VDS = 10V, ID = 10A
1
mA
100
160 190
15 S
DYNAMIC
Input Capacitance
Ciss
1728
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
1096
pF
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Qg
Gate-Source Charge2
Qgs VDD = 50V, ID = 10A, VGS = 10V
Gate-Drain Charge2
Qgd
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 300V
ID = 10A, RG =6Ω
Fall Time2
tf
25
60
10 nC
29
56
38
nS
112
40
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 10A, VGS = 0V
20 A
1.5 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 10A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
395 nS
4.3 nC
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
REV 1.0
2 2017/1/18


Part Number P2060ZT
Description N-Channel MOSFET
Maker UNIKC
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P2060ZT Datasheet PDF






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