900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






UNIKC

P2003HV Datasheet Preview

P2003HV Datasheet

N-Channel MOSFET

No Preview Available !

P2003HV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ @VGS = 10V
ID
8A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
8
6
40
Avalanche Current
IAS 17.5
Avalanche Energy
L =0.1mH
EAS
15.3
Power Dissipation
TA= 25 °C
TA =70 °C
PD
1.9
1.2
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
64
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C
UNITS
°C / W
REV 1.0
1 2014/9/11




UNIKC

P2003HV Datasheet Preview

P2003HV Datasheet

N-Channel MOSFET

No Preview Available !

P2003HV
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
30
1
1.5 2.5
±100
1
10
V
nA
mA
Drain-Source On-State
Resistance1
Forward Transconductance1
On-State Drain Current1
RDS(ON)
gfs
ID(ON)
VGS = 4.5V, ID = 6A
VGS = 10V, ID = 8A
VDS = 5V, ID = 8A
VDS = 10V, VGS = 10V
24 31
17.4 20
21
40
S
A
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 15V, f = 1MHz
569
73
63
pF
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2.03
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 0.5V(BR)DSS, VGS = 10V,
ID =8A
Qgd
12.7
2.4
3.8
Turn-On Delay Time2
td(on)
16
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 15V,ID @ 1A,
VGS = 10V, RGEN = 6Ω
27
42
Fall Time2
tf
18
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 8A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 8A, dlF/dt = 100A /mS
12.1
2.9
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
8
1.4
nC
nS
A
V
nS
nC
REV 1.0
2 2014/9/11


Part Number P2003HV
Description N-Channel MOSFET
Maker UNIKC
PDF Download

P2003HV Datasheet PDF






Similar Datasheet

1 P2003HV N-Channel MOSFET
UNIKC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy