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P2003EVT
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID -9A
SOP- 08
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 70 °C
ID IDM
-9 -8 -32
Avalanche Current
IAS -28
Avalanche Energy
L = 0.1mH
EAS
40
Power Dissipation
TC = 25 °C TC = 70 °C
PD
2.5 1.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
P2003EVT Datasheet
