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P2003EV8 Datasheet Preview

P2003EV8 Datasheet

P-Channel MOSFET

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P2003EV8
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID
-10A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-10
-8
-55
Avalanche Current
IAS -29
Avalanche Energy
L = 0.1mH
EAS
43
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
3
2
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
25
40
UNITS
°C / W
Ver 1.0
1 2012/4/13




UNIKC

P2003EV8 Datasheet Preview

P2003EV8 Datasheet

P-Channel MOSFET

No Preview Available !

P2003EV8
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±25V
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
VGS = -4.5V, ID = -7A
VGS = -10V, ID = -10A
VDS = -10V, ID = -10A
-30
-1.0 -1.5 -3.0
±100
-1
-10
25 35
15 20
24
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
Reverse Transfer Capacitance
Crss
1490
301
190
Gate Resistance
Rg VGS = 15mV, VDS = 0V, f = 1MHz
7.8
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS,
ID = -10A, VGS = -10V
26
4
5
Turn-On Delay Time2
td(on)
5.7
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = -15V, ID @ -1A,
VGS = -10V, RGS= 6Ω
10
18
Fall Time2
tf
5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -1A, VGS = 0V
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
9
-2.5
-1.2
UNIT
V
nA
mA
mΩ
S
pF
Ω
nC
nS
A
V
Ver 1.0
2 2012/4/13


Part Number P2003EV8
Description P-Channel MOSFET
Maker UNIKC
PDF Download

P2003EV8 Datasheet PDF






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