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P2003EV
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID -9A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
-9 -7 -45
Avalanche Current
IAS -30
Avalanche Energy
L = 0.1mH
EAS
46
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.5 1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA
TYPICAL
MAXIMUM UNITS 50 °C / W
Ver 1.
P2003EV Datasheet
