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P2003EV Datasheet Preview

P2003EV Datasheet

P-Channel MOSFET

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P2003EV
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID
-9A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-9
-7
-45
Avalanche Current
IAS -30
Avalanche Energy
L = 0.1mH
EAS
46
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
50 °C / W
Ver 1.1
1 2013-4-1




UNIKC

P2003EV Datasheet Preview

P2003EV Datasheet

P-Channel MOSFET

No Preview Available !

P2003EV
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±25V
-30
-1.0 -1.5 -3.0
V
±100 nA
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
-45
-1
mA
-10
A
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -7A
VGS = -10V, ID = -9A
VDS = -10V, ID = -9A
25 35
15 20
23 S
DYNAMIC
Input Capacitance
Ciss
1350
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
261 pF
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 15mV, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS,
ID = -9A, VGS = -10V
VDS = -15V, ID @ -9A,
VGS = -10V, RGS= 6Ω
207
3.2 Ω
30
4 nC
8
22
14
nS
50
24
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -1A, VGS = 0V
-2.5 A
-1 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -9A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
17 nS
7 nC
2Independent of operating temperature.
Ver 1.1
2 2013-4-1


Part Number P2003EV
Description P-Channel MOSFET
Maker UNIKC
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P2003EV Datasheet PDF






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