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P2003ETF
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID -26A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
±25
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID
IDM
-26 -16 -120
Avalanche Current
IAS
-31.4
Avalanche Energy
L = 0.1mH
EAS
49.5
Power Dissipation
TC = 25 °C
PD
29
TC = 100 °C
12
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC RqJA
TYPICAL
MAXIMUM UNITS 4.2 °C / W 62.5
Rev 1.
P2003ETF Datasheet
