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UNIKC

P2003ETF Datasheet Preview

P2003ETF Datasheet

P-Channel MOSFET

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P2003ETF
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID
-26A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
-26
-16
-120
Avalanche Current
IAS -31.4
Avalanche Energy
L = 0.1mH
EAS
49.5
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
29
12
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
4.2
°C / W
62.5
Rev 1.0
1 2014/11/17




UNIKC

P2003ETF Datasheet Preview

P2003ETF Datasheet

P-Channel MOSFET

No Preview Available !

P2003ETF
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±25V
-30
-1 -1.5
-3
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
1
mA
10
Drain-Source On-State Resistance1 RDS(ON)
Forward Transconductance1
On-State Drain Current1
gfs
ID(ON)
VGS = -4.5V, ID = -12A
VGS = -10V, ID = -18A
VDS = -5V, ID = -18A
VDS = -5V, VGS = -10V
-120
23
16
29
35
20
S
A
DYNAMIC
Input Capacitance
Ciss
1290
Output Capacitance
Coss
VGS = 0V, VDS = -15V, f = 1MHz
210 pF
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = -15V,
ID = -18A, VGS = -10V
VDS = -15V, ID @ -18A,
VGS = -10V, RGEN = 6Ω
198
2.9 Ω
31
4.5 nC
10.3
22
16
nS
70
38
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -18A, VGS = 0V
-26 A
-1.6 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -18A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
20 nS
9 nC
2Independent of operating temperature.
Rev 1.0
2 2014/11/17


Part Number P2003ETF
Description P-Channel MOSFET
Maker UNIKC
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